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| APTGT300A60G Phase leg Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 VCES = 600V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 600 430 300 500 20 1150 600A @ 550V Unit V A June, 2006 1-5 APTGT300A60G - Rev 1 E1 OUT Q2 G2 E2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT website - http://www.advancedpower.com APTGT300A60G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 300A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.4 1.5 5.8 Max 350 1.8 6.5 500 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 300A R G = 1.8 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 300A R G = 1.8 VGE = 15V VBus = 300V IC = 300A R G = 1.8 Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min Typ 24 1.5 0.75 115 45 200 55 120 50 250 70 1.5 2.7 8.55 10.5 Max Unit nF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 300A VGE = 0V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 400 Unit V A A di/dt =3100A/s mJ APT website - http://www.advancedpower.com 2-5 APTGT300A60G - Rev 1 June, 2006 IF = 300A VR = 300V 300 1.5 1.4 130 225 13.5 28.5 3.5 7.1 1.9 V ns C APTGT300A60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.13 0.21 175 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APT website - http://www.advancedpower.com 3-5 APTGT300A60G - Rev 1 June, 2006 APTGT300A60G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 T J = 150C VGE =13V VGE=15V 600 T J=25C 500 T J=125C 500 TJ =150C IC (A) 400 300 200 100 TJ=25C 400 IC (A) 300 200 100 0 VGE =19V VGE=9V 0 0 0.5 1 1.5 VCE (V) 2 2.5 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 600 500 400 Transfert Characteristics 20 T J=25C Energy losses vs Collector Current 17.5 15 E (mJ) 12.5 10 7.5 5 2.5 0 11 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 400 VCE = 300V VGE = 15V RG = 1.8 TJ = 150C Eoff Er IC (A) 300 200 TJ =125C T J=150C 100 0 5 6 7 8 VGE (V) T J=25C Eon 9 10 500 600 Switching Energy Losses vs Gate Resistance 20 VCE = 300V VGE =15V IC = 300A T J = 150C Eoff 15 E (mJ) Eon 500 IC (A) 400 300 200 100 0 12 0 VGE =15V TJ =150C RG=1.8 10 5 Eon Er 0 0 2 4 6 8 10 Gate Resistance (ohms) 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 IGBT 0.7 0.5 0.3 Rectangular Pulse Duration in Seconds APT website - http://www.advancedpower.com 4-5 APTGT300A60G - Rev 1 June, 2006 APTGT300A60G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 100 200 300 400 500 IC (A) Hard switching ZCS ZVS VCE=300V D=50% RG=1.8 TJ =150C Forward Characteristic of diode 600 500 400 IF (A) 300 200 100 0 0 0.4 0.8 1.2 V F (V) 1.6 2 T J=125C T J=150C TJ =25C Tc=85C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) Diode 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT300A60G - Rev 1 June, 2006 |
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